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| LAB TO247-AD Package Outline. Dimensions in mm (inches) 4.69 5.31 1.49 2.49 (0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) SEME BFC42 4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 20.80 (0.819) 21.46 (0.845) 3.55 (0.140) 3.81 (0.150) 4.50 (0.177) M ax. 1 2 3 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 (0.215) BSC VDSS ID(cont) RDS(on) 1000V 7.0A 2.00 Terminal 1 Gate Terminal 3 Source 19.81 (0.780) 20.32 (0.800) Terminal 2 Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS ID IDM VGS PD TJ , TSTG TL Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Total Power Dissipation @ Tcase = 25C Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. 1000 7.0 28 30 240 -55 to 150 300 V A A V W C STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) Characteristic BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250A VDS = VDSS VDS = 0.8VDSS , TC = 125C VGS = 30V , VDS = 0V VDS = VGS , ID = 1.0mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 7 2.00 Min. 1000 Typ. Max. Unit V 250 1000 100 4 A nA V A 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/94 LAB DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 1.8 Min. Typ. 1530 230 80 66 6.5 36 14 13 55 19 Max. Unit 1800 325 120 105 10 54 28 26 82 37 ns nC pF SEME BFC42 SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions (Body Diode) (Body Diode) VGS = 0V , IS = - ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/s 225 1.2 450 2.5 Min. Typ. Max. Unit 7 A 28 1.3 910 5 V ns C SAFE OPERATING AREA CHARACTERISTICS Characteristic SOA1 Safe Operating Area Test Conditions VDS = 0.4VDSS , t = 1 Sec. IDS = PD / 0.4VDSS VDS = PD / ID [Cont.] IDS = ID [Cont.] , t = 1 Sec. Min. 240 Typ. Max. Unit W SOA2 ILM Safe Operating Area Inductive Current Clamped 240 28 W A THERMAL CHARACTERISTICS RJC RJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 Min. Typ. Max. Unit 0.51 C/W 40 CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/94 |
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